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 Data Sheet DUAL LDO REGULATORS General Description
The AP2401 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each channel has a current limit circuit for current protection. The AP2401 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. The chip enable function allows the output of each channel to be turned on/off independently, greatly reducing the power consumption. The AP2401 series have 1.8V/2.5V, 1.8V/2.8V, 1.8V/ 3.3V and 2.8V/1.8V versions. The AP2401 are available in standard SOT-23-6 package.
AP2401 Features
* * * * * * * * Maximum Output Current/Channel: More Than 150mA (300mA Limit) High Output Voltage Accuracy: 2% Low Quiescent Current/Channel: 25A Typical Low Standby Current: 0.1A Typical High PSRR: 70dB Typical f=1kHz) Extremely Low Noise: 30Vrms (10Hz to 100kHz) Operating Temperature: -40 to 85oC Compatible with Low ESR Ceramic Capacitor
Applications
* * * * * * Mobile Phones, Cordless Phones Wireless Communication Equipment Portable Games Cameras, Video Recorders Sub-board Power Supplies for Telecom Equipment Battery Powered Equipment
SOT-23-6
Figure 1. Package Type of AP2401
Oct. 2009 Rev. 1. 4 1
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Pin Configuration
K Package (SOT-23-6)
Pin 1 Dot by Marking
AP2401
CE1 VIN CE2
1 2 3
6 5 4
VOUT1 GND VOUT2
Figure 2. Pin Configuration of AP2401 (Top View)
Pin Description
Pin Number 1 2 3 4 5 6 Pin Name CE1 VIN CE2 VOUT2 GND VOUT1 Function On/Off control 1, logic high=enable; logic low=shutdown Input voltage On/Off control 2, logic high=enable; logic low=shutdown Output voltage 2 Ground Output voltage 1
Oct. 2009 Rev. 1. 4 2
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Functional Block Diagram AP2401
CE1
1
On/Off Control
Error Amplifier 1 Current Limit
6
VOUT1
VR1 Each Circuit
VIN GND
2 5
VR2 Each Circuit Error Amplifier 2 Current Limit
4
VOUT2
CE2
3
On/Off Control
Voltage Reference
Figure 3. Functional Block Diagram of AP2401
Oct. 2009 Rev. 1. 4 3
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Ordering Information
AP2401 E1: Lead Free G1: Green TR: Tape and Reel Package K: SOT-23-6
AP2401
Circuit Type B: Active High (Without Built-in Pull-down Resistor) 1: Fixed Output 1.8V (Channel 1) 3: Fixed Output 2.8V (Channel 1) 1: Fixed Output 1.8V (Channel 2) 2: Fixed Output 2.5V (Channel 2) 3: Fixed Output 2.8V (Channel 2) 4: Fixed Output 3.3V (Channel 2)
Package
Temperature Range
Condition
Output Voltages
Part Number Lead Free AP2401B12KTRE1 AP2401B13KTRE1 AP2401B14KTRE1 AP2401B31KTRE1 Green AP2401B12KTRG1 AP2401B13KTRG1 AP2401B14KTRG1 AP2401B31KTRG1
Marking ID Lead Free Green
Packing Type
Active High Without Built-in Pulldown Resistor Active High Without Built-in Pulldown Resistor Active High Without Built-in Pulldown Resistor Active High Without Built-in Pulldown Resistor
1.8V/2.5V
E9P
G9P
Tape & Reel Tape & Reel Tape & Reel Tape & Reel
1.8V/2.8V
E9Q
G9Q
SOT-23-6
-40 to 85oC
1.8V/3.3V
E9R
G9R
2.8V/1.8V
E8R
G8R
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
Oct. 2009 Rev. 1. 4 4
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Absolute Maximum Ratings (Note 1)
Parameter Input Voltage Enable Input Voltage Output Current (TA=25oC) Power Dissipation (TA=25oC) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) ESD (Human Body Model) Symbol VIN VCE IOUT1+IOUT2 PD TJ TSTG TLEAD ESD Value 6.5 6.5 700 250 150 -65 to 150 260 3000 Unit V V mA mW
oC o
AP2401
C
oC
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ -40 Min Max 6 85 Unit V
oC
Oct. 2009 Rev. 1. 4 5
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Electrical Characteristics
(Channel 1/Channel 2: VIN=VOUT+1V, TJ=25oC, CIN=1F, COUT=1F, unless otherwise specified.) Parameter Output Voltage Accuracy Input Voltage Maximum Output Current Load Regulation Line Regulation Symbol VOUT/VOUT VIN IOUT VRLOAD VRLINE 1mAIOUT100mA VOUT+1VVIN6V IOUT=30mA, VCE=VIN VOUT=1.8V IOUT=30mA Dropout Voltage VDROP IOUT=100mA VOUT=2.5V VOUT=2.8V VOUT=3.3V VOUT=1.8V VOUT=2.5V VOUT=2.8V VOUT=3.3V Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Current Limit Short Circuit Current RMS Output Noise CE "High" Voltage CE "Low" Voltage Thermal Resistance (Junction to Case) JC IQ ISTD PSRR VCE=VIN=VOUT+1V, IOUT=0mA VCE in OFF mode Ripple 0.5Vp-p, f=1kHz VIN=VOUT+1V, IOUT=30mA 150 15 0.01 60 45 45 35 175 135 135 125 25 0.1 70 60 0.2 70 55 55 45 195 160 160 150 45 1 mV Conditions Variation from specified VOUT, IOUT=30mA Min -2 Typ Max 2 6 Unit % V mA mV %/V
AP2401
A A
dB ppm/oC mA mA
(VOUT/VOUT)/T IOUT=30mA, -40oCTJ85oC ILIMIT ISHORT VNOISE VCE=VIN VCE=VIN, VOUT=0 TA=25oC 10Hz f100kHz CE input voltage "High" CE input voltage "Low" SOT-23-6 1.3
100
300 30 30 6 0.25 61.3
Vrms
V V
o
C/W
Oct. 2009 Rev. 1. 4 6
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics AP2401
2.0 1.8 1.6
3.0
2.5
Output Voltage (V)
Output Voltage (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 50 100 150 200 250
2.0
2.5V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C
o o
1.5
1.8V (Channel 1) o TJ=-40 C TJ=25 C TJ=85 C
300 350 400
o o
1.0
0.5
0.0
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 4. Output Voltage vs. Output Current
Figure 5. Output Voltage vs. Output Current
3.0
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
2.5
Output Voltage (V)
2.0
1.5
Output Voltage (V)
1.0
2.8V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C
o o
3.3V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C
0 50 100 150 200 250 300 350 400
o o
0.5
0.0
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 6. Output Voltage vs. Output Current
Figure 7. Output Voltage vs. Output Current
Oct. 2009 Rev. 1. 4 7
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
2.0 1.8 1.6
3.0
2.5
Output Voltage (V)
Output Voltage (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
1.8V (Channel 1) o TJ=25 C VIN=2.1V VIN=4V VIN=6V
2.0
2.5V (Channel 2) o TJ=25 C VIN=2.8V VIN=4V VIN=6V
1.5
1.0
0.5
0.0
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 8. Output Voltage vs. Output Current
Figure 9. Output Voltage vs. Output Current
3.0
3.2
2.5
2.8
Output Voltage (V)
2.0
Output Voltage (V)
2.4 2.0 1.6 1.2 0.8 0.4 0.0
3.3V (Channel 2) o TJ=25 C VIN=3.6V VIN=4V VIN=6V
1.5
1.0
2.8V (Channel 2) o TJ=25 C VIN=3.1V VIN=4V VIN=6V
0.5
0.0
0
50
100
150
200
250
300
350
400
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 10. Output Voltage vs. Output Current
Figure 11. Output Voltage vs. Output Current
Oct. 2009 Rev. 1. 4 8
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
2.0 1.8
3.0
2.5
1.6
Output Voltage (V)
Output Voltage (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4
2.0
1.5
1.8V (Channel 1) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA
1.0
2.5V (Channel 2) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA
0 1 2 3 4 5 6
0.5
0.0
5
6
Input Voltage (V)
Input Voltage (V)
Figure 12. Output Voltage vs. Input Voltage
Figure 13. Output Voltage vs. Input Voltage
3.0
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
2.5
Output Voltage (V)
2.0
1.5
1.0
2.8V (Channel 2) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA
0 1 2 3 4 5 6
Output Voltage (V)
3.3V (Channel 2) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA
0 1 2 3 4 5 6
0.5
0.0
Input Voltage (V)
Input Voltage (V)
Figure 14. Output Voltage vs. Input Voltage
Figure 15. Output Voltage vs. Input Voltage
Oct. 2009 Rev. 1. 4 9
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
450 400 350
350
Dropout Voltage (mV)
Dropout Voltage (mV)
1.8V (Channel 1) o TJ=-40 C TJ=25 C TJ=85 C
o o
300 250 200 150 100 50 0
2.5V (Channel 2)) o TJ=-40 C TJ=25 C TJ=85 C
o o
300 250 200 150 100 50 0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Output Current (mA)
Output Current (mA)
Figure 16. Dropout Voltage vs. Output Current
Figure 17. Dropout Voltage vs. Output Current
350 300
350
Dropout Voltage (mV)
2.8V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C
o o
300 250 200 150 100 50 0
3.3V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C
o o
Dropout Voltage (mV)
250 200 150 100 50 0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Output Current (mA)
Output Current (mA)
Figure 18. Dropout Voltage vs. Output Current
Figure 19. Dropout Voltage vs. Output Current
Oct. 2009 Rev. 1. 4 10
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
1.84 1.83 1.82
2.56
2.54
Output Voltage (V)
Output Voltage (V)
2.52
1.81 1.80 1.79 1.78 1.77 1.76
2.50
2.48
1.8V (Channel 1) VIN=2.8V IOUT=30mA
2.46
2.5V (Channel 2) VIN=3.5V IOUT=30mA
-25 0 25
o
2.44
-25 0 25
o
50
75
50
75
Junction Temperature ( C)
Junction Temperature ( C)
Figure 20. Output Voltage vs. Junction Temperature
Figure 21. Output Voltage vs. Junction Temperature
2.86
3.34
2.84
3.32
Output Voltage (V)
Output Voltage (V)
2.82
3.30
2.80
3.28
2.78
3.26
2.76
2.8V (Channel 2) VIN=3.8V IOUT=30mA
3.24
3.3V (Channel 2) VIN=4.3V IOUT=30mA
2.74
-25
0
25
o
50
75
3.22 -40
-20
0
20
40
o
60
80
Junction Temperature ( C)
Junction Temperature ( C)
Figure 22. Output Voltage vs. Junction Temperature
Figure 23. Output Voltage vs. Junction Temperature
Oct. 2009 Rev. 1. 4 11
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
90
90
75
1.8V (Channel 1) o TJ=-40 C
Quiescent Current (A)
Quiescent Current (A)
TJ=25 C
60
o o
75
2.5V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C
o o
TJ=85 C
60
45
45
30
30
15
15
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
Input Voltage (V)
Input Voltage (V)
Figure 24. Quiescent Current vs. Input Voltage
Figure 25. Quiescent Current vs. Input Voltage
90
90
75
2.8V (Channel 2) o TJ=-40 C
75
3.3V (Channel 2) o TJ=-40 C TJ=25 C
o o
Quiescent Current (A)
60
TJ=85 C
o
Quiescent Current (A)
TJ=25 C
o
60
TJ=85 C
45
45
30
30
15
15
0
0
0 1 2 3 4 5 6
0
1
2
3
4
5
6
Input Voltage (V)
Input Voltage (V)
Figure 26. Quiescent Current vs. Input Voltage
Figure 27. Quiescent Current vs. Input Voltage
Oct. 2009 Rev. 1. 4 12
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
30.0 29.5 29.0
31.0
Quiescent Current (A)
Quiescent Current (A)
28.5 28.0 27.5 27.0 26.5 26.0 25.5 25.0 24.5 24.0 -25 0 25
1.8V (Channel 1) VIN=2.8V IOUT=0
30.5 30.0 29.5 29.0 28.5 28.0 27.5 27.0 26.5
2.5V (Channel 2) VIN=3.5V IOUT=0
50
o
75
26.0
-25
0
25
o
50
75
Junction Temperature ( C)
Junction Temperature ( C)
Figure 28. Quiescent Current vs. Junction Temperature
Figure 29. Quiescent Current vs. Junction Temperature
31.0 30.5 30.0
32.0
2.8V (Channel 2) VIN=3.8V
Quiescent Current (A)
31.5 31.0 30.5 30.0 29.5 29.0 28.5 28.0 27.5 27.0 -25 0 25
3.3V (Channel 2) VIN=4.3V IOUT=0
Quiescent Current (A)
29.5 29.0 28.5 28.0 27.5 27.0 26.5 26.0
IOUT=0
-25
0
25
o
50
75
50
o
75
Junction Temperature ( C)
Junction Temperature ( C)
Figure 30. Quiescent Current vs. Junction Temperature
Figure 31. Quiescent Current vs. Junction Temperature
Oct. 2009 Rev. 1. 4 13
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
6 VIN (1V/Div) VIN (1V/Div) 5 4 3 1.8V (Channel 1)
7 6 5 4 2.5V (Channel 2)
VOUT (50mV/Div)
VOUT (50mV/Div)
50 0 -50 -100
Time (40s/Div)
50 0 -50 -100
Time (40s/Div)
Figure 32. Line Transient (Conditions: IOUT=30mA, CIN=100nF, COUT=1F)
Figure 33. Line Transient (Conditions: IOUT=30mA, CIN=100nF, COUT=1F)
7 VIN (1V/Div) VIN (1V/Div) 6 5 4 2.8V (Channel 2)
7 6 5 4 1.8V/2.5V (Channel 1/Channel 2)
VOUT1 (100mV/Div)
VOUT (50mV/Div)
50 0 -50 -100
Time (40s/Div)
100 0 -100 -200
VOUT2 VOUT1
0 -50
-100 -150
Time (40s/Div)
Figure 34. Line Transient (Conditions: IOUT=30mA, CIN=100nF, COUT=1F)
Figure 35. Line Transient (Conditions: channel 1 and 2 on, IOUT=30mA, CIN=100nF, COUT=1F)
Oct. 2009 Rev. 1. 4 14
BCD Semiconductor Manufacturing Limited
VOUT2 (50mV/Div)
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
7 VIN (1V/Div) 6 5 4 1.8V/2.5V (Channel 1/Channel 2)
100
VOUT (50mV/Div)
1.8V (Channel 1)
50 0 -50
VOUT1 (100mV/Div)
VOUT2 (50mV/Div)
100 0 -100 -200
IOUT (50mA/Div)
VOUT2 VOUT1
0 -50 -100 -150
Time (40s/Div)
100 50 0 -50
Time (100s/Div)
Figure 36. Line Transient (Conditions: channel 1 and 2 on, IOUT=30mA, CIN=COUT=1F)
Figure 37. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F)
VOUT (50mV/Div)
VOUT (50mV/Div)
100 50 0 -50 2.5V (Channel 2)
100 50 0 -50 2.8V (Channel 2)
IOUT (50mA/Div)
IOUT (50mA/Div)
100 50 0 -50
Time (100s/Div)
100 50 0 -50
Time (100s/Div)
Figure 38. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F)
Figure 39. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F)
Oct. 2009 Rev. 1. 4 15
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
VOUT (50mV/Div)
50 0 -50
3.3V (Channel 2)
VOUT1 (20mV/Div)
0 -20 -40
0
VOUT2
100 50 0 -50
Time (100s/Div)
IOUT (50mA/Div)
100 50 0 -50
Time (100s/Div)
Figure 40. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F)
IOUT2 (50mA/Div)
Figure 41. Cross Talk 1 (Conditions: channel 1 and 2 on, IOUT1=30mA, IOUT2=10 to 100mA, CIN=COUT=1F)
VOUT1 (100mV/Div)
VOUT2 (20mV/Div)
VOUT1 (20mV/Div)
0 -100 -200
1.8V/2.5V (Channel 1/Channel 2)
VOUT1
40 20 0
0 -20 -40
200 100 0
VOUT1
VOUT2
VOUT2
100 50 0 -50
IOUT2 (50mA/Div)
100 50 0 -50
Time (100s/Div)
IOUT2 (50mA/Div)
Time (100s/Div)
Figure 42. Cross Talk 2 (Conditions: channel 1 and 2 on, IOUT1=10 to 100mA, IOUT2=30mA, CIN=COUT=1F)
Figure 43. Cross Talk 3 (Conditions: channel 1 and 2 on, IOUT1=30mA, IOUT2=10 to 100mA, CIN=COUT=1F)
Oct. 2009 Rev. 1. 4 16
BCD Semiconductor Manufacturing Limited
VOUT2 (100mV/Div)
100
60
20
1.8V/2.8V (Channel 1/Channel 2)
300
VOUT2 (100mV/Div)
100
20
300 1.8V/2.5V (Channel 1/Channel 2) 200 VOUT1 100
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
IOUT1 (50mA/Div) VOUT1 (100mV/Div)
VOUT1 (20mV/Div)
0 -100 -200
1.8V/2.8V (Channel 1/Channel 2)
40
0 -20 -40
VOUT1
20 0
VOUT1
200 100 0
VOUT2
VOUT2
100 50 0 -50
100 50 0 -50
Time (100s/Div)
IOUT2 (50mA/Div)
Time (100s/Div)
Figure 44. Cross Talk 4 (Conditions: channel 1 and 2 on, IOUT1=10 to 100mA, IOUT2=30mA, CIN=COUT=1F)
Figure 45. Cross Talk 5 (Conditions: channel 1 and 2 on, IOUT1=30mA, IOUT2=10 to 100mA, CIN=COUT=1F)
VOUT1 (100mV/Div)
0 -100 -200
1.8V/3.3V (Channel 1/Channel 2)
VOUT1 (50mV/Div)
40
0 -50 -100
1.8V/2.5V (Channel 1/Channel 2)
100 50 0
VOUT1 VOUT2
20 0
VOUT1 VOUT2
IOUT1 (100mA/Div)
100 50 0 -50
Time (100s/Div)
100 0 -100 -200
IOUT1
300
200 100 0
IOUT2
Time (100s/Div)
Figure 46. Cross Talk 6 (Conditions: channel 1 and 2 on, IOUT1=10 to 100mA, IOUT2=30mA, CIN=COUT=1F)
Figure 47. Cross Talk 7 (Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA, CIN=COUT=1F)
Oct. 2009 Rev. 1. 4 17
BCD Semiconductor Manufacturing Limited
IOUT2 (100mA/Div)
IOUT1 (50mA/Div)
VOUT2 (50mV/Div)
VOUT2 (20mV/Div)
100
60
50
150
VOUT2 (100mV/Div)
VOUT2 (20mV/Div)
100
60
20
1.8V/3.3V (Channel 1/Channel 2)
300
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
VOUT2 (50mV/Div)
VOUT1 (50mV/Div)
VOUT1 (50mV/Div)
0 -50 -100
1.8V/2.8V (Channel 1/Channel 2)
100 50 0
0 -50 -100
100 50 0
VOUT1
VOUT1 VOUT2
VOUT2
100 0 -100 -200
Time (100s/Div)
IOUT2 (100mA/Div)
IOUT1 (100mA/Div)
IOUT1 (100mA/Div)
IOUT1
300
100 0 -100 -200 IOUT2 IOUT1
300
200 100 0
200 100 0
IOUT2
Time (100s/Div)
Figure 48. Cross Talk 8 (Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA, CIN=COUT=1F)
Figure 49. Cross Talk 9 (Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA, CIN=COUT=1F)
VCE1/VCE2 (1V/Div)
3 2 1 0
1.8V/2.8V (Channel 1/Channel 2)
ESR of Output Capacitor ()
100
10
VOUT1 0 -1 -2 -3
Time (10s/Div)
1
Stable Area
VOUT1 (1V/Div)
3 VOUT2 2 1 0
VOUT2 (1V/Div)
0.1
0.01
0
25
50
75
100
125
150
175
200
Output Current (mA)
Figure 50. Enable Voltage vs. Output Voltage (Conditions: VCE1=VCE2=0 to 2V, IOUT=0mA, CIN=COUT=1F)
Figure 51. ESR vs. Output Current
Oct. 2009 Rev. 1. 4 18
BCD Semiconductor Manufacturing Limited
IOUT2 (100mA/Div)
VOUT2 (50mV/Div)
50
150
50
1.8V/3.3V (Channel 1/Channel 2)
150
Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401
100 90 80 70
100
1.8V (Channel 1) VIN=2.8V IOUT=30mA COUT=1F
90 80 70
2.5V (Channel 2) VIN=3.5V IOUT=30mA COUT=1F
PSRR (dB)
PSRR (dB)
60 50 40 30 20 10 0 10 100 1k 10k 100k
60 50 40 30 20 10 0 10 100 1k 10k 100k
Frequency (Hz)
Frequency (Hz)
Figure 52. PSRR vs. Frequency
Figure 53. PSRR vs. Frequency
100 90 80 70
100
2.8V (Channel 2) VIN=3.8V IOUT=30mA COUT=1F
90 80 70
3.3V (Channel 2) VIN=4.3V IOUT=30mA COUT=1F
PSRR (dB)
PSRR (dB)
60 50 40 30 20 10 0 10 100 1k 10k 100k
60 50 40 30 20 10 0 10 100 1k 10k 100k
Frequency (Hz)
Frequency (Hz)
Figure 54. PSRR vs. Frequency
Figure 55. PSRR vs. Frequency
Oct. 2009 Rev. 1. 4 19
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Typical Application AP2401
VIN
VIN =3.5V
AP2401B12 CE1 VOUT1 VIN
CIN 1F
VOUT1=1.8V COUT1 1F
VOUT1
GND VOUT2
CE2
VOUT 2 =2.5V COUT2 1F
VOUT2
Figure 56. Typical Application of AP2401
Oct. 2009 Rev. 1. 4 20
BCD Semiconductor Manufacturing Limited
Data Sheet DUAL LDO REGULATORS Mechanical Dimensions SOT-23-6 Unit: mm(inch)
0 8 0.200(0.008) 0.300(0.012) 0.600(0.024)
AP2401
2.820(0.111) 3.020(0.119) 0.300(0.012) 0.400(0.016)
6 2.650(0.104) 2.950(0.116)
5
4
Pin 1 Dot by Marking
1
2
3
0.700(0.028)REF
0.950(0.037)TYP 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.100(0.004) 0.100(0.004) 0.200(0.008)
0.900(0.035) 1.450(0.057) MAX 1.300(0.051)
Oct. 2009 Rev. 1. 4 21
BCD Semiconductor Manufacturing Limited
1.500(0.059) 1.700(0.067)
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others.
MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited
- Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788
REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE
BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806


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